- 您现在的位置：买卖IC网 > Sheet目录527 > SUP28N15-52-E3 (Vishay Siliconix)MOSFET N-CH D-S 150V TO220AB
SUP28N15-52
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
150
2
4.5
± 100
V
nA
V DS = 120 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 120 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 120 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 5 A
50
0.042
0.052
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 5 A, T J = 125 °C
V GS = 10 V, I D = 5 A, T J = 175 °C
V GS = 6 V, I D = 5 A
0.047
0.109
0.145
0.060
Ω
Forward
Transconductance b
g fs
V DS = 15 V, I D = 25 A
40
S
Dynamic a
Input Capacitance
C iss
1725
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
t d(on)
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 75 V, V GS = 10 V, I D = 28 A
216
100
33
9
12
15
40
25
pF
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 50 V, R L = 3 Ω
I D ? 28 A, V GEN = 10 V, R g = 2.5 Ω
70
25
60
100
40
90
ns
Source-Drain Diode Ratings and Characteristics T C = 25 °C
Pulsed Current
I SM
50
A
Diode Forward Voltage
b
V SD
I F = 25 A, V GS = 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = 28 A, dI/dt = 100 A/μs
95
140
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71939
S09-1501-Rev. B, 10-Aug-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SUP40P10-43-GE3
MOSFET P-CH 100V 36A TO220AB
SUP45N03-13L-E3
MOSFET N-CH D-S 30V TO220AB
SUP60N02-4M5P-E3
MOSFET N-CH D-S 20V TO220AB
SUP60N10-16L-E3
MOSFET N-CH D-S 100V TO220AB
SUP60N10-18P-E3
MOSFET N-CH D-S 100V TO220AB
SUP65P04-15-E3
MOSFET P-CH 40V 65A TO220AB
SUP75N03-04-E3
MOSFET N-CH D-S 30V TO220AB
SUP75P03-07-E3
MOSFET P-CH D-S 30V TO220AB
相关代理商/技术参数
SUP31950-1
制造商:Panasonic Industrial Company 功能描述:PC BOARD
SUP33N20-60P-E3
功能描述:MOSFET 200V 33A 156W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP36N20-54P
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 150 Celsius MOSFET
SUP36N20-54P-E3
功能描述:MOSFET 200V 36A 166W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP40N06-25L
功能描述:MOSFET 60V 40A 90W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP40N06-25L-E3
功能描述:MOSFET 60V 40A 90W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP40N10-30
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175C MOSFET
SUP40N10-30-E3
功能描述:MOSFET 100V 40A 107W 30mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube